Layer Transfer from Chemically Etched 150 mm Porous Si Substrates
نویسندگان
چکیده
منابع مشابه
Layer Transfer from Chemically Etched 150 mm Porous Si Substrates
We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etc...
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ژورنال
عنوان ژورنال: Materials
سال: 2011
ISSN: 1996-1944
DOI: 10.3390/ma4050941